2SK3192

Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm (0.7) ■ Features Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) 21.0±0.5 φ 3.2±0.1 15.0±0.2 ■ Applications PDP Switching mode regulator 16.2±0.5 (3.2) (2.3) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 ±30 ±30 ±120 925 100 3 150 −55 to +150 °C °C Unit V V A A mJ W 5.45±0.3 10.9±0.5 1 2 3 1: Gate 2: Drain 3: Source EIAJ: SC-92 TOP-3F-B1 Package Marking Symbol: K3192 Internal Connection D Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C G ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf VDD = 100 V, ID = 15 A, RL = 6.7 Ω VGS = 10 V Conditions ID = 1 mA, ...