2SK3211L

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP * 3 3 2 Ratings 200 ±20 25 100 25 25 41 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Tch Pch * Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3211 Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 — — 1.0 — — 18 — — — — — — — — — Typ — — — — — 60 65 30 2420 790 340 20 230 590 330 0.95 230 Max — — ±10 10 2.5 75 85 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V*4 ID = 15 A, VGS = 4 V*4 ID = 15 A, VDS = 10 V *4 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A, VGS = 10 V RL = 2 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to sou...