2SK3214

2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance R DS =130mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3214 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 10 40 10 10 6.6 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 — — 1.0 — — 8 — — — — — — — — — Typ — — — — — 130 150 13 1100 280 130 15 75 280 110 0.85 100 Max — — ±10 10 2.5 170 190 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1mA, VDS = 10V I D =5A, VGS = 10VNote4 I D =5A, VGS = 4V Note4 I D =5A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D =5A, VGS = 10V RL = 6Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak...