2SK3216-01

2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 100 ±50 ±200 ±30 464 1.67 135 +150 -55 to +150 Unit V A A V mJ W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=298µH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V VGS=0V VGS=±30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =25V VGS =0V f=1MHz VCC=48V ID=50A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=50A V...