MOS FET. 2SK3290 Datasheet

2SK3290 FET. Datasheet pdf. Equivalent

Part 2SK3290
Description Silicon N Channel MOS FET
Feature 2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Fea.
Manufacture Hitachi Semiconductor
Datasheet
Download 2SK3290 Datasheet

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE- 2SK3290 Datasheet
Recommendation Recommendation Datasheet 2SK3290 Datasheet





2SK3290
2SK3290
Silicon N Channel MOS FET
High Speed Switching
Features
Low on-resistance
RDS = 0.455 typ. (VGS = 10 V , ID = 250 mA)
RDS = 0.9 typ. (VGS = 4 V , ID = 100 mA)
4 V gate drive device.
Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-744 C (Z)
4th.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain



2SK3290
2SK3290
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note 2
30
±20
500
2
500
400
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Note: 1. PW 10 µs, duty cycle 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note: 3. Pulse test
4. Marking is BN
t d(on)
tr
t d(off)
tf
Min
30
±20
1.3
350
Typ
0.455
0.9
540
5
30
2
240
1700
850
1300
Max
±5
-1
2.3
0.525
1.25
Unit
V
V
µA
µA
V
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10µA, VDS = 5 V
ID = 250 mA,VGS = 10 V Note 3
ID = 100 mA,VGS = 4 V Note 3
ID = 250 mA, VDS = 10 V Note 3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 250 mA, VGS = 10 V
RL = 40
2





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