2SK3290

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA) 4 V gate drive device. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 500 2 500 400 150 –55 to +150 Unit V V mA A mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.3 — — 350 — — — — — — — Typ — — — — — 0.455 0.9 540 5 30 2 240 1700 850 1300 Max — — ±5 -1 2.3 0.525 1.25 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 250 mA,VGS = 10 V Note 3 ID = 100 mA,VGS = 4 V Note 3 ID = 250 mA, VDS = 10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admitt...