Silicon MOSFET. 2SK3291 Datasheet

2SK3291 MOSFET. Datasheet pdf. Equivalent

Part 2SK3291
Description N-Channel Silicon MOSFET
Feature Ordering number:ENN6413 N-Channel Silicon MOSFET 2SK3291 Ultrahigh-Speed Switching Applications Fe.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3291 Datasheet

Ordering number:ENN6413 N-Channel Silicon MOSFET 2SK3291 U 2SK3291 Datasheet
Recommendation Recommendation Datasheet 2SK3291 Datasheet





2SK3291
Ordering number:ENN6413
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
N-Channel Silicon MOSFET
2SK3291
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK3291]
4.5
1.6
1.5
Specifications
0.4 0.5
32
1.5
3.0
1
0.75
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C
Ratings
60
±20
1.6
6.4
1.3
3.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KX
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.8A
ID=0.8A, VGS=10V
ID=0.8A, VGS=4V
Ratings
min typ max
Unit
60 V
10 µA
±10 µA
1.0 2.4 V
1.2 1.7
S
380 500 m
500 680 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-1699 No.6413–1/4



2SK3291
2SK3291
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Switching Time Test Circuit
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=1.6A
IS=1.6A, VGS=0
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
P.G 50
VDD=30V
ID=0.8A
RL=37.5
D VOUT
2SK3291
S
Ratings
min typ max
Unit
70 pF
20 pF
5 pF
5 ns
4 ns
18 ns
5 ns
3.6 nC
0.6 nC
0.5 nC
0.85
1.2 V
ID -- VDS
1.8
5.0V
1.6
1.4
1.2
1.0
0.8 VGS=2.5V
0.6
0.4
0.2
0
0
1400
1200
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS – V IT01258
RDS(on) -- VGS
Tc=25°C
ID=0.8A
1000
800
600
400
200
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS – V IT01260
3.5
VDS=10V
3.0
ID -- VGS
2.5
2.0
1.5
1.0
0.5
0
0
1000
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS – V IT01259
RDS(on) -- Tc
800
600 I DI D==0.08.A8A, V, VGGS=S4=V10V
400
200
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
IT01261
No.6413–2/4





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