Silicon MOSFET. 2SK3293 Datasheet

2SK3293 MOSFET. Datasheet pdf. Equivalent

Part 2SK3293
Description N-Channel Silicon MOSFET
Feature Ordering number:ENN6345 N-Channel Silicon MOSFET 2SK3293 Ultrahigh-Speed Switching Applications Fe.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK3293 Datasheet

Ordering number:ENN6345 N-Channel Silicon MOSFET 2SK3293 U 2SK3293 Datasheet
Recommendation Recommendation Datasheet 2SK3293 Datasheet





2SK3293
Ordering number:ENN6345
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
N-Channel Silicon MOSFET
2SK3293
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2062A
[2SK3293]
4.5
1.6
1.5
Specifications
0.4 0.5
32
1.5
3.0
1
0.75
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C
Ratings
60
±20
3
12
1.5
3.5
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KZ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=1A, VGS=4V
Ratings
min typ max
Unit
60 V
10 µA
±10 µA
1.0 2.4 V
2.6 3.6
S
115 150 m
150 210 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2737 No.6345–1/4



2SK3293
2SK3293
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Switching Time Test Circuit
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=3A
IS=3A, VGS=0
VIN
10V
0V
PW=10µs
D.C.1%
VIN
VDD=30V
ID=1.5A
RL=20
D VOUT
G
P.G 502SK3293
S
Ratings
min typ max
Unit
220 pF
75 pF
25 pF
7 ns
8 ns
30 ns
29 ns
8.6 nC
1.3 nC
1.8 nC
0.83
1.2 V
3.5
6.0V
8.0V
3.0
2.5
ID -- VDS
3.0V
2.0
1.5
VGS=2.5V
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS – V IT01457
RDS(on) -- VGS
250
Tc=25°C
200 ID=1.5A
1.0A
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS – V IT01459
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-to-Source Voltage, VGS – V IT01458
RDS(on) -- Tc
300
250
200
150
I D=I 1D.=01A.,5VA,GVS=G4SV=10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
IT01460
No.6345–2/4





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