MOS FET. 2SK3298 Datasheet

2SK3298 FET. Datasheet pdf. Equivalent

Part 2SK3298
Description SWITCHING N-CHANNEL POWER MOS FET
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D.
Manufacture NEC
Datasheet
Download 2SK3298 Datasheet

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N 2SK3298 Datasheet
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2SK3298
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±7.5 A
±30 A
Total Power Dissipation (TA = 25°C) PT1
2.0 W
Total Power Dissipation (TC = 25°C) PT2
40 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
7.5 A
37.5 mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000



2SK3298
2SK3298
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
Drain to Source On-state Resistance
| yfs |
RDS(on)
VDS = 10 V, ID = 4.0 A
VGS = 10 V, ID = 4.0 A
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 10 V
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Crss
td(on)
tr
td(off)
f = 1 MHz
ID = 4.0 A
VGS(on) = 10 V
VDD = 150 V
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
tf
QG
QGS
QGD
VF(S-D)
trr
RG = 10
ID = 7.5 A
VDD = 450 V
VGS = 10 V
IF = 7.5 A, VGS = 0 V
IF = 7.5 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 50 A/µs
MIN.
2.5
3.2
TYP.
0.67
1580
280
25
27
14
66
24
34
8.2
12.3
1.0
1.6
9.0
MAX.
100
±100
3.5
0.75
UNIT
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
5 TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
10 %
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14059EJ1V0DS00





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