MOS FET. 2SK3299 Datasheet

2SK3299 FET. Datasheet pdf. Equivalent

Part 2SK3299
Description SWITCHING N-CHANNEL POWER MOS FET
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D.
Manufacture NEC
Datasheet
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2SK3299
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
600 V
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±10 A
±40 A
Total Power Dissipation (TA = 25°C) PT1
1.5 W
Total Power Dissipation (TC = 25°C) PT2
75 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150 °C
Single Avalanche Current Note2
IAS
10 A
Single Avalanche Energy Note2
EAS
66.7 mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14060EJ1V0DS00 (1st edition)
The mark shows major revised points.
©
1999,2000
Date Published April 2000 NS CP(K)
Printed in Japan



2SK3299
2SK3299
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
Drain to Source On-state Resistance
| yfs |
RDS(on)
VDS = 10 V, ID = 5.0 A
VGS = 10 V, ID = 5.0 A
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 10 V
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
f = 1 MHz
VDD = 150 V, ID = 5.0 A
VGS(on) = 10 V
RG = 10
VDD = 450 V
VGS = 10 V
ID = 10 A
IF = 10 A, VGS = 0 V
IF = 10 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 50 A/µs
MIN.
2.5
3.2
TYP.
0.68
1580
280
25
27
17
66
24
34
8.2
12.3
1.0
1.9
12
MAX.
100
±100
3.5
0.75
UNIT
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on) 90 %
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
10 %
tf
ton toff
2 Data Sheet D14060EJ1V0DS00





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