2SK3304

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3304 PACKAGE TO-3P FEATURES Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A) Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg Note2 Note2 900 ±30 ±7 ±21 130 3.0 –55 to + 150 7 147 V V A A W W °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13992EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan © 2000 2SK3304 ELECTRICAL CH...