2SK3320

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 2SK3320 For Low Noise Audio Amplifier Applications Two devices in a ultra super mini (five pins) package High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD (Note 1) 200 mW JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 125 °C Tstg −55 to 125 °C TOSHIBA 2-2L1B Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability ...