2SK3352

Ordering number : ENN8125 2SK3352 N-Channel Silicon MOSFET 2SK3352 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current Cutoff Voltage IGSS VGS(off) Forward Transfer Admittance Static Drain-to-Source On-State Resistance yfs RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time Turn-OFF Delay Time Fall Time Marking : K3352 tr td(off) tf ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=10A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings 30 ±20 45 80 1.65 40 150 --55 to +150 Unit V V A A W W °C °C min 30 1.0 19 Ratings typ max Unit V 1 µA ±10 µA 2.4 V 27 S 11 15 mΩ 15 21 mΩ 1400 pF 420 pF 210 pF 14 ns 530 ns 100 ns ...