2SK3357

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3357 PACKAGE TO-3P DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A) Low Ciss: Ciss = 9800 pF TYP. Built-in gate protection diode (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±75 ±300 150 3.0 150 –55 to +150 75 562 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 0.83 41.7 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14134EJ2V0DS00 (2nd edition) Date Published May 2000 NS CP(K) Printed in Japan The mark 5 shows maj...