2SK3363-01

2SK3363-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 30 ±50 ±200 ±16 1735 80 +150 Unit V A A V mJ W °C °C -55 to +150 *1 L=0.925mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS V DS=30V VGS=0V VGS=±16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS =25V VGS =0V f=1MHz VCC=15V ID=100A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=50A VGS=0V Tch=2...