Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers.
FEATURES
• Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±20 ±80 30 1.0 150 –55 to + 150
V V A A W W °C °C
Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 4.17 125 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14256EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan
©
1999
2SK3366
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/µs ID = 20 A, VDD = 24 V, VGS = 10 V ID = 10 A, VGS(on) = 10 V, VDD = 15 V, RG = 10 Ω TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VGS = 4.0 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 730 250 120 28 420 47 64 15 2.8 4.1 1.0 30 26 1.5 5 MIN. TYP. 17.2 26 33 2.0 10 10 ±10 MAX. 21 33 43 2.5 UNIT mΩ mΩ mΩ V S
µA µA
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA PG.
90 % 90 % ID
PG.
RG RG = 10 Ω
0 ID
10 %
VGS (on)
90 %
RL VDD
VDD
50 Ω
VGS 0 t
t = 1µ s Duty Cycle ≤ 1 %
D Wave Form
I
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet D14256EJ1V0DS00
2SK3366
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
30 25 20 15 10 5 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA 100
S( ) on
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 VGS =10 V Pulsed
Li
ID - Drain Current - A
1m
ID - Drain Current - A
RD t VG (a ID(DC) =20 A
d ite m V) 0 =1 S
ID(PULSE) = 80 A
PW
=1
s
00
µs
10
Po
60 4.5 V 40
we
rD
10
iss ipa tio
ms
nL im
ite
d
1.0
20
4.0 V
0.1
TC = 25˚C Single Pulse
1.0
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100
Pulsed
ID - Drain Current - A
10
1
TA = 150˚C 75˚C 25˚C −25˚C −50˚C
0.1
0.01
0.001 0
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
Data Sheet D14256EJ1V0DS00
3
2SK3366
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - ˚C/W
Rth(ch-A) = 125 ˚C/W 100
10 Rth(ch-C) = 4.17 ˚C/W
1
Single Pulse 0.1 100µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
RDS(on) - Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40
| yfs | - Forward Transfer Admittance - S
10
Tch = −50˚C −25˚C 25˚C 75˚C 150˚C
VDS = 10 V Pulsed
30 20 ID = 10 A
1
10
0.1 0.1
1
10
100
0
5
10
15
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 VDS = 10 V ID = 1 mA
Pulsed
80 60 VGS = 4.0 V 4.5 V
40 10 V 20 0 0.1
1
10
100
− 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D14256EJ1V0DS00
2SK3366
RDS(on) - Drain to Source On-st.