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2SK3366 Dataheets PDF



Part Number 2SK3366
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK3366 Datasheet2SK3366 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in gate protection diode ORDERING INFORMATION PART NUM.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±20 ±80 30 1.0 150 –55 to + 150 V V A A W W °C °C Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 4.17 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14256EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan © 1999 2SK3366 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/µs ID = 20 A, VDD = 24 V, VGS = 10 V ID = 10 A, VGS(on) = 10 V, VDD = 15 V, RG = 10 Ω TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VGS = 4.0 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 730 250 120 28 420 47 64 15 2.8 4.1 1.0 30 26 1.5 5 MIN. TYP. 17.2 26 33 2.0 10 10 ±10 MAX. 21 33 43 2.5 UNIT mΩ mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME D.U.T. RL VGS VGS Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = 2 mA PG. 90 % 90 % ID PG. RG RG = 10 Ω 0 ID 10 % VGS (on) 90 % RL VDD VDD 50 Ω VGS 0 t t = 1µ s Duty Cycle ≤ 1 % D Wave Form I 0 10 % td (on) ton tr td (off) toff 10 % tf 2 Data Sheet D14256EJ1V0DS00 2SK3366 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 S( ) on DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 VGS =10 V Pulsed Li ID - Drain Current - A 1m ID - Drain Current - A RD t VG (a ID(DC) =20 A d ite m V) 0 =1 S ID(PULSE) = 80 A PW =1 s 00 µs 10 Po 60 4.5 V 40 we rD 10 iss ipa tio ms nL im ite d 1.0 20 4.0 V 0.1 TC = 25˚C Single Pulse 1.0 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed ID - Drain Current - A 10 1 TA = 150˚C 75˚C 25˚C −25˚C −50˚C 0.1 0.01 0.001 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V Data Sheet D14256EJ1V0DS00 3 2SK3366 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 4.17 ˚C/W 1 Single Pulse 0.1 100µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 | yfs | - Forward Transfer Admittance - S 10 Tch = −50˚C −25˚C 25˚C 75˚C 150˚C VDS = 10 V Pulsed 30 20 ID = 10 A 1 10 0.1 0.1 1 10 100 0 5 10 15 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 VDS = 10 V ID = 1 mA Pulsed 80 60 VGS = 4.0 V 4.5 V 40 10 V 20 0 0.1 1 10 100 − 50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet D14256EJ1V0DS00 2SK3366 RDS(on) - Drain to Source On-st.


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