2SK3373

2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 1.7 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) (Note 1) Pulse (t = 100 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Pulse (t = 1 ms) Rating 500 500 ±30 2 5 12 20 112 2 2 150 -55 to150 W mJ A mJ °C °C A Unit V V V JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 W, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK3373 Elec...