2SK3378

2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 (Z) 1st.Edition. June 1999 Features Low on-resistance R DS =2.7 Ω typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) 4 V gate drive device. Small package (CMPAK) Outline CMPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3378 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 100 400 100 300 150 –55 to +150 Unit V V mA mA mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.3 — — 55 — — — — — — — Typ — — — — — 2.7 4.7 85 1.6 7 0.5 100 330 1150 940 Max — — ±5 1 2.3 3.5 7.0 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 50 mA,VGS = 10 V Note 3 ID = 20 mA,VGS = 4 V Note 3 ID = 50 mA, VDS =10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance I...