2SK3380

2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.Edition. June 1999 Features Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Outline SPAK D 12 3 G 1. Source 2. Drain 3. Gate S 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings 30 ±20 300 1.2 300 300 150 –55 to +150 Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 — — 1.3 — — 145 — — — — — — — Typ — — — — — 1.26 2.8 220 6 18 2 200 600 1100 1100 Max — — ±5 1 2.3 1.44 3.44 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 150 mA,VGS = 10 V Note 2 ID = 50 mA,VGS = 4 V Note 2 ID = 150 mA, VDS =10 V Note 2 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = 10 V VGS = 0 f = 1 M...