2SK3386

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3386 2SK3386-Z PACKAGE TO-251 TO-252 DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low On-state Resistance 5 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) Low Ciss : Ciss = 2100 pF TYP. Built-in Gate Protection Diode TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) 5 5 Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±34 ±120 40 1.0 150 –55 to +150 28 78 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE 5 Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.13 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14471EJ1V0DS00 (1st edition) Date Published ...