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2SK3390 Dataheets PDF



Part Number 2SK3390
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3390 Datasheet2SK3390 Datasheet (PDF)

2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to.

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