N-Channel MOSFET
Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low f...
Description
Silicon Junction FETs (Small Signal)
2SK3396
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For infrared sensor ■ Features
Low gate-source cutoff current IGSS Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
0.15 min.
0.23+0.05 –0.02
1
2
0 to 0.01
Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature
Symbol VGDO VGSO IG ID PD Tch Tstg
Rating −40 −40 10 1 100 125 −55 to +125
Unit V V mA mA mW °C °C
1: Source 2: Drain 3: Gate SSSMini3-F1 Package
Marking Symbol: EB
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Forward transfer admittance Gate-source cutoff voltage Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Symbol VGDS IDSS IGSS Yfs VGSC Ciss Coss Crss Conditions IG = −10 µA, VDS = 0 VDS = 10 V, VGS = 0 VGS = −20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, ID = 1 µA VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz 0.05 −1.3 1.0 0.4 0.4 −3.0 Min −40 30 200...
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