2SK3408

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4-V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES Can be driven by a 4-V power source Low on-state resistance RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A) RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A) Built-in G-S protection diode against ESD. 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SK3408 PACKAGE SC-96 Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Drain to Gate Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VDGS VGSS ID(DC) ID(pulse) PT1 Note2 43±5 43±5 ±20 ±1.0 ±4.0 0.2 1.25 150 –55 to +150 V V V A A W W °C °C Gate Body Diode Gate Protection Diode Marking: XF Source Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark ...