2SK3417

2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications · · · · · · Reverse-recovery time: trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ïYfsï = 4.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 83.3 Unit °C/W °C/W Note 1: Please use devise on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1...