2SK3432

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3432 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3432 2SK3432-S 2SK3432-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance: 5 5 RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9 mΩ MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 9500 pF TYP. Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 40 ±20 ±83 ±332 100 1.5 150 –55 to +150 69 476 V V A A W W °C °C A mJ (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy IAS EAS (TO-220SMD) Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14601EJ1V0DS00 ...