PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING I...
PRELIMINARY DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3435
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3435 2SK3435-S 2SK3435-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) Built-in gate protection diode 5 Low Ciss: Ciss = 3200 pF TYP.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 ±20 ±80 ±320 84 1.5 150 –55 to +150 31 96
V V A A W W °C °C A mJ
(TO-262)
5 Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
5 5
Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
(TO-220SMD)
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14604EJ1V0DS00...