2SK3466

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: ïYfsï = 4.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) · · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 -55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 2.5 Unit °C/W Circuit Configuration 4 Note 1: Please use devises on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 1 2002-02-06 2SK3466 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Ga...