2SK3539

Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET Unit: mm (0.425) For switching ■ Features High-speed switching Wide frequency band Gate protection diode built-in 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 (0.65) (0.65) 1.3±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 10˚ 2.0±0.2 0.9±0.1 0.9+0.2 –0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-Source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω Conditions ID = 10 µA, VGS = 0 VDS = 50 V, VGS = 0 VGS = ±7 V, VDS = 0 ID = 1.0 µA, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward trancfer admitance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Min 50 0 to 0.1 Typ Max Unit V µA µA V Ω mS pF pF pF ns ns 1.0 ±5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12 ID = 10 mA, VDS = 3 V, f = 1 kH...