2SK3541
Transistor
Small switching (30V, 0.1A)
2SK3541
!Applications Interfacing, switching (30V, 100mA) !External dime...
2SK3541
Transistor
Small switching (30V, 0.1A)
2SK3541
!Applications Interfacing, switching (30V, 100mA) !External dimensions (Units : mm)
!Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
ROHM : VMT3
0.2
1.2 0.8
(2) (3) (1)
0.2
1.2 0.32
0.4 0.4
0.13 0~0.1
0.5
0.15Max.
0.22
0.8
(1) Gate (2) Source (3) Drain Abbreviated symbol : KN
!Structure Silicon N-channel MOSFET
!Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Reverse drain current Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD∗2 Tch Tstg Limits 30 ±20 100 400 100 400 150 150 −55~+150 Unit V V mA mA mA mA mW °C °C
!Equivalent circuit
Drain
Gate
Total power dissipation (Tc=25°C) Channel temperature Storage temperature
∗ Gate Protection Diode
Source
∗1 Pw≤10µs, Duty cycle<1% ∗2 With each pin mounted on the recommended lands.
∗A protection diode is included between the gate
and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded.
2SK3541
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacita...