2SK3560

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features Low on-resistance, low Qg High avalanche resistance 10.1±0.3 (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 Unit: mm 0.6±0.1 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 (10.2) (8.9) 1 2 3 (6.4) (1.4) (2.1) 3.0±0.5 0 to 0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 ±30 30 120 50 3 150 −55 to +150 °C °C Unit V V A A W 0 to 0.3 1: Gate 2: Drain 3: Source TO-220C-G1 Package Channel temperature Storage temperature Internal Connection D G S ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol VDSS VDSF Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf trr Qrr L = 230 µH, VDD = 100 V IDR = 15 A, di /dt = 100 A/ µs VDD ≈ 100 V, ID = 15 A RL ≈ 6.7 Ω, VGS = 10 V Conditions ID = 1 mA, VGS = 0 IDR = 30 A, VGS = 0 VDS = 25 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = ±30 V, VDS = 0...