2SK363

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm High breakdown voltage: VGDS = −40 V High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −40 V 10 mA 400 mW 125 °C −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse trans...