2SK368

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -100 10 150 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = -80 V, VDS = 0 V (BR) GDS VDS = 0, IG = -100 mA IDSS VDS = 10 V, VGS = 0 (Note) VGS (OFF) ïYfsï Ciss Crss NF VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, VGS = 0 RG = 100 kW, f = 100 Hz Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking Min Typ. Max Unit ¾ ¾ -1.0 nA -100 ¾ ¾ V 0.6 ¾ 6.5 mA -0.4 ¾ -3.5 V 1.5 4.6 ¾ mS ¾ 13 ¾ pF ¾ 3 ¾ pF ¾ 0.5 ¾ dB 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to impro...