2SK369

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) · High breakdown voltage: VGDS = −40 V (min) · Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 Ω) · High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -40 10 400 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure (Note 2) IGSS VGS = -30 V, VDS = 0 V (BR) GDS VDS = 0, IG = -100 mA IDSS VDS = 10 V, VGS = 0 (Note 1) VGS (OFF) VDS = 10 V, ID = 0.1 mA ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz, (IDSS = 5 mA) Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VGD = -10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 100 W, ID = 5 mA, f = 100 Hz NF (2) VDS = 10 V, RG = 100 W, ID = 5 mA, f = 1 kHz ¾ ¾ -1.0 nA -40 ¾ ¾ V 5.0 ¾ 30 mA -0.3 ¾ -1.2 V 25 40 ¾ mS ¾ 75 ¾ pF ¾ 15...