TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant Curr...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK372
Unit: mm
· High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-40 10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS V (BR) GDS
VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA
¾ ¾ -1.0 nA
-40 ¾
¾
V
IDSS (Note 1)
VDS = 10 V, VGS = 0
5.0 ¾ 30 mA
VGS (OFF) VDS = 10 V, ID = 0.1 mA
-0.3
¾ -1.2
V
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25
60
¾
mS
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
¾ 75 ¾ pF
Crss VDG = 10 V, ID = 0, f = 1 MHz
¾ 15 ¾ pF
RDS (ON) VDS = 10 mV, VGS = 0
(Note 2) ¾ 20 ¾
W
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, Y: 14.0~30.0 mA Note 2: Concition of the typical value IDSS = 15 mA
1 2003-03-26
2SK372
2 2003-03-26
2SK372
3...