2SK374

Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO VGSO ID IG PD Tch Tstg 55 −55 −55 30 10 200 150 −55 to +150 V V V mA mA mW °C °C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 2B s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDC VGSC gm Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz 2.5 7.5 6.5 1.9 2.5 −55 −80 −5 min 1 typ max 20 −10 Unit mA nA V V mS pF pF dB Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF * IDSS rank classification Runk IDSS (mA) P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR S 10 to 20 2BS ...