2SK410 FET Datasheet

2SK410 Datasheet, PDF, Equivalent


Part Number

2SK410

Description

Silicon N-Channel MOS FET

Manufacture

Hitachi Semiconductor

Total Page 10 Pages
Datasheet
Download 2SK410 Datasheet


2SK410
2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
High breakdown voltage
You can decrease handling current.
Included gate protection diode
No secondary–breakdown
Wide area of safe operation
Simple bias circuitry
No thermal runaway
Outline

2SK410
2SK410
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
Pch*1
Tch
Tstg
Ratings
180
±20
8
120
150
–55 to +150
Unit
V
V
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Power output
Drain efficiency
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source cutoff voltage
Drain current
Drain to source saturation
voltage
Forward transfer admittance
Input capacitance
Symbol Min
PO 140
η
V(BR)DSS 180
V(BR)GSS ±20
VGS(off)
I DSS
VDS(on)
0.5
|yfs|
Ciss
0.9
Output capacitance
Coss —
Reverse transfer capacitance
Power output
Power gain
Crss
PO
PG
Note: 1. Pulse Test
Typ Max Unit Test conditions
180 —
80 —
——
W
%
V
VDD = 80 V, f = 28 MHz,
IDQ = 0.1 A, Pin = 5 W
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
— 3.0 V
ID = 1 mA, VDS = 10 V*1
— 1.0 mA VDS = 140 V, VGS = 0
3.8 6.0 V
ID = 4 A, VGS = 10 V*1
1.25 —
440 —
75 —
0.5 —
100 —
17 —
S
pF
pF
pF
WPEP
dB
ID = 3 A, VDS = 20 V*1
VGS = 5 V, VDS = 0,
f = 1 MHz
VGS = –5 V, VDS = 50 V,
f = 1 MHz
VGD = –50 V, f = 1 MHz
VDD = 80 V, f = 28 MHz,
f = 20 kHz,
IMD –30 dB
CAUTION: OPERATING HAZARDS
Beryllium Oxide Ceramics have been employed in these products.
Since dust or fume of the material is highly poison to the human body, please do not treat them
mechanically or chemically in the manner which might expose them to the air. And it should never be
thrown out with general industrial or domestic waste.
2


Features 2SK410 Silicon N-Channel MOS FET Applic ation HF/VHF power amplifier Features • • • • • • • High breakd own voltage You can decrease handling c urrent. Included gate protection diode No secondary–breakdown Wide area of s afe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolu te Maximum Ratings (Ta = 25°C) Item Dr ain to source voltage Gate to source vo ltage Drain current Channel dissipation Channel temperature Storage temperatur e Note: 1. Value at TC = 25°C Symbol V DSS VGSS ID Pch* Tch Tstg 1 Ratings 18 0 ±20 8 120 150 –55 to +150 Unit V V A W °C °C Electrical Characteristi cs (Ta = 25°C) Item Power output Drain efficiency Drain to source breakdown v oltage Gate to source breakdown voltage Gate to source cutoff voltage Drain cu rrent Drain to source saturation voltag e Forward transfer admittance Input cap acitance Output capacitance Reverse tra nsfer capacitance Power output Power ga in Note: 1. Pulse Test Symbol Min PO η V(BR)DSS V(BR)GSS VGS(off) I DSS VDS(on) |yfs| C.
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