2SK410

2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 180 ±20 8 120 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Power output Drain efficiency Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff voltage Drain current Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power output Power gain Note: 1. Pulse Test Symbol Min PO η V(BR)DSS V(BR)GSS VGS(off) I DSS VDS(on) |yfs| Ciss Coss Crss PO PG 140 — 180 ±20 0.5 — — 0.9 — — — — — Typ 180 80 — — — — 3.8 1.25 440 75 0.5 100 17 Max — — — — 3.0 1.0 6.0 — — — — — — Unit W % V V V mA V S pF pF pF WPEP dB Test conditions VDD = 80 V, f = 28 MHz, I DQ = 0.1 A, Pin = 5 W I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 I D = 1 mA, VDS = 10 V*1 VDS = 140 V, VGS = 0 I D = 4 A, VGS = 10 V*1 I D = 3 A, VDS = 20 V*1 VGS = 5 V, VDS = 0, f = 1 MHz VGS = –5 V, VDS = 50 V, f = 1 MHz VGD = –50 V, f = 1 MHz VDD = 80 V, f = 28 MHz, ∆f = 20 kH...