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2SK443

Sanyo Semicon Device

N-Channel MOSFET

Ordering number:EN1419B N-Channel Junction Silicon FET 2SK443 Video Camera First-Stage Applications Features · Largey...


Sanyo Semicon Device

2SK443

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Description
Ordering number:EN1419B N-Channel Junction Silicon FET 2SK443 Video Camera First-Stage Applications Features · Largeyfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK443-applied sets to be small-sized. Package Dimensions unit:mm 2050A [2SK443] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VDSS VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS ID=10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–10V, VDS=0 Zero-Gate Voltage Drain Current IDSS* VDS=5V, VGS=0 Cutoff Voltage VGS(off) VDS=5V, ID=100µA Forward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz * : The 2SK443 is classified by IDSS as follows (unit : mA) : 5.0 (Note) Marking : AJ IDSS rank : 5, 6, 7 5 12.0 10.0 6 24.0 16.0 7 38.0 0.8 1.1 1 : Source 2 : Drain 3 : Gate SANYO : CP Ratings 15 –15 10 50 200 125 –55 to +125 Unit V V mA mA mW ˚C ˚C Ratings min typ –15 5.0* –0.9 20 30 9.0 2.8 1.5 max –1.0 38.0* –2.0 Unit V nA mA V mS pF pF dB Any and all SANYO products described or contai...




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