N-Channel MOSFET
Ordering number:EN1419B
N-Channel Junction Silicon FET
2SK443
Video Camera First-Stage Applications
Features
· Largey...
Description
Ordering number:EN1419B
N-Channel Junction Silicon FET
2SK443
Video Camera First-Stage Applications
Features
· Largeyfs. · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK443-applied
sets to be small-sized.
Package Dimensions
unit:mm 2050A
[2SK443]
0.4 3
0.16
0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
VDSS VGDS
IG ID PD Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS ID=10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Zero-Gate Voltage Drain Current
IDSS* VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0, f=1kHz
Input Capacitance
Ciss VDS=5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss VDS=5V, VGS=0, f=1MHz
Noise Figure
NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
* : The 2SK443 is classified by IDSS as follows (unit : mA) : 5.0 (Note) Marking : AJ
IDSS rank : 5, 6, 7
5 12.0 10.0 6 24.0 16.0 7 38.0
0.8 1.1
1 : Source 2 : Drain 3 : Gate SANYO : CP
Ratings 15
–15 10 50
200 125 –55 to +125
Unit V V mA mA
mW ˚C ˚C
Ratings min typ
–15
5.0* –0.9
20 30 9.0 2.8 1.5
max
–1.0 38.0* –2.0
Unit
V nA mA V mS pF pF dB
Any and all SANYO products described or contai...
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