2SK494

2SK494 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline SPAK 1 23 1. Drain 2. Gate 3. Source 2SK494 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 –22 100 10 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to source breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Note: Grade I DSS Symbol V(BR)GSS I GSS VGS(off) I DSS* y fs Ciss Crss NF 1 Min –22 — — 6 20 — — — Typ — — — — — 9.0 2.8 0.5 Max — –10 –2.5 40 — 11.0 4.0 3.0 Unit V nA V mA mS pF pF dB Test conditions I G = –10 µA, VDS = 0 VGS = –15 V, VDS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 mA, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, ID = 1 mA, f = 1 kHz, Rg = 1 k Ω 1. The 2SK494 is grouped by I DSS as follows. B 6 to 14 C 12 to 22 D 18 to 30 E 26 to 40 See character curves 2SK435. 2 2SK494 Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight...