2SK601

Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45˚ 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.5±0.08 1.5±0.1 3.0±0.15 0.4±0.04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 ±0.5 ±1 1 150 −55 to +150 Unit 3 2 1 V V A A W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin) marking Tch Tstg Marking Symbol: O PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.1 Unit µA µA V 80 1.5 2 300 45 30 8 15 20 3.5 4...