Document
2SK724
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
F- I SERIES
Outline Drawings
TO-3P
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters General purpose power amplifier
3. Source
JEDEC EIAJ
SC-65
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 500 10 40 10 ±20 100 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Switching time (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss ton td(off) tf V SD trr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V VGS=0V Tch=25°C VGS=±20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=50 Ω ID=2.8A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C
Min.
500 2.1
Typ.
Max.
4.0 500 100 0.67 2400 300 120 195 430 140 1.7
Units
V V µA nA Ω S pF
3.0 10 10 0.5 6.0 10.0 1600 200 80 130 330 110 1.1 500
ns
V ns
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
35 1.25
Units
°C/W °C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics
20 1.5 15
2SK724
On state resistance vs. Tch
ID 10 [A]
1.0 RDS(on) [Ω]
0.5 5
0 0 10 20 VDS [ V ] 30
0 -50 0 50 Tch [ °C ] 100 150
Typical transfer characteristics
Typical Drain-Source on state resistance vs. ID
25
1.2 1.0 0.8 RDS(on) [Ω] 0.6 0.4
20
ID [A]
15
10
5
0.2 0 0 5 VGS [ V ] 10 0 10 ID [ A ] 20
0
Typical forward transconductance vs. ID
Gate threshold voltage vs. Tch
4
10
3 VGS(th) [V] 2
gfs [S] 5
1
0 0 10 ID [ A ] 20
0
-50
0
50 Tch [ °C ]
100
150
2
FUJI POWER MOSFET
Typical capacitance vs. VDS Typical input charge
500
2SK724
20
100
400
16
C [nF] 10-1
VDS [V]
300
12
VGS [V]
200
8
100
4
10-2 0 10 20 VDS [ V ] 30 40
0 0 20 40 60 Qg [ nC ] 80 100
0
Forward characteristics of reverse diode
160 10
1
Allowable power dissipation vs. Tc
140 120 100
IF 100 [A]
PD [W]
80 60
10-1
40 20 0
0
0.4
0.8 1.2 VSD [ V ]
1.6
2.0
0
50
100 Tc [ °C ]
150
Safe operating area
Transient thermal impedance
100 Rth [°C/W] 10-1
101
ID [A] 100
10-2 -5 10
10-4
10-3 10-2 t [ sec. ]
10-1
100
10-1
101
102 VDS [ V ]
103
3
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