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2SK724 Dataheets PDF



Part Number 2SK724
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK724 Datasheet2SK724 Datasheet (PDF)

2SK724 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F- I SERIES Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulse.

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2SK724 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F- I SERIES Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters General purpose power amplifier 3. Source JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 500 10 40 10 ±20 100 +150 -55 to +150 Unit V A A A V W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Switching time (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss ton td(off) tf V SD trr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V VGS=0V Tch=25°C VGS=±20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=50 Ω ID=2.8A VGS=10V IF=2xIDR VGS=0V Tch=25°C IF=IDR di/dt=100A/µs Tch=25°C Min. 500 2.1 Typ. Max. 4.0 500 100 0.67 2400 300 120 195 430 140 1.7 Units V V µA nA Ω S pF 3.0 10 10 0.5 6.0 10.0 1600 200 80 130 330 110 1.1 500 ns V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 35 1.25 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics Typical output characteristics 20 1.5 15 2SK724 On state resistance vs. Tch ID 10 [A] 1.0 RDS(on) [Ω] 0.5 5 0 0 10 20 VDS [ V ] 30 0 -50 0 50 Tch [ °C ] 100 150 Typical transfer characteristics Typical Drain-Source on state resistance vs. ID 25 1.2 1.0 0.8 RDS(on) [Ω] 0.6 0.4 20 ID [A] 15 10 5 0.2 0 0 5 VGS [ V ] 10 0 10 ID [ A ] 20 0 Typical forward transconductance vs. ID Gate threshold voltage vs. Tch 4 10 3 VGS(th) [V] 2 gfs [S] 5 1 0 0 10 ID [ A ] 20 0 -50 0 50 Tch [ °C ] 100 150 2 FUJI POWER MOSFET Typical capacitance vs. VDS Typical input charge 500 2SK724 20 100 400 16 C [nF] 10-1 VDS [V] 300 12 VGS [V] 200 8 100 4 10-2 0 10 20 VDS [ V ] 30 40 0 0 20 40 60 Qg [ nC ] 80 100 0 Forward characteristics of reverse diode 160 10 1 Allowable power dissipation vs. Tc 140 120 100 IF 100 [A] PD [W] 80 60 10-1 40 20 0 0 0.4 0.8 1.2 VSD [ V ] 1.6 2.0 0 50 100 Tc [ °C ] 150 Safe operating area Transient thermal impedance 100 Rth [°C/W] 10-1 101 ID [A] 100 10-2 -5 10 10-4 10-3 10-2 t [ sec. ] 10-1 100 10-1 101 102 VDS [ V ] 103 3 .


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