2SK880

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 2SK880 Audio Frequency Low Noise Amplifier Applications · High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ · High input impedance: IGSS = −1 nA (max) at VGS = −30 V · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V mA mW °C °C Marking Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = -30 V, VDS = 0 V (BR) GDS VDS = 0, IG = -100 mA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) NF (2) VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kW ID = 0.5 mA, f = 10 Hz VDS = 10 V, RG = 1 kW ID = 0.5 mA, f = 1 kHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA 1 Min Typ. Max Unit ¾ ¾ -1.0 nA -50 ¾ ¾ V 1.2 ¾ 14.0 mA -0.2 ¾ -1.5 V 4.0 15 ¾ mS ¾ 13 ¾ pF ¾ 3 ¾ pF ¾5¾ dB ¾1¾ 2003...