2SK937

Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET process. · Large yfs. · Small Ciss. Package Dimensions unit:mm 2019B [2SK937] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDS IGSS IDSS VGS(off) | yfs |1 | yfs |2 * : The 2SK937 is classified by IDSS as follows (unit : mA) : 40 Y3 52 48 Y4 63 57 Y5 75 IG=–10µA, VDS=0 VGS=–20V, VDS=0 VDS=10V, VGS=0 VDS=10V, ID=100µA VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS=0, f=1kHz 1.3 0.44 1 : Source 2 : Gate 3 : Drain JEDEC : TO-92 EIAJ : SC-43 SANYO : NP Ratings 40 –40 10 100 300 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –40 V –1.0 nA 40* 75* mA –2.0 –3.0 –5.0 V 10 15 mS 22 30 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other appl...