2SK975

2SK975 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 ±20 1.5 4.5 1.5 900 150 –55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — Typ — — — — — 0.3 0.4 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.9 — — — — — — — — — 1.5 140 70 20 3 12 50 30 0.9 45 Max — — ±10 100 2.0 0.4 0.55 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, diF/dt = 50 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Te...