Document
30FWJ2CZ47M
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
30FWJ2CZ47M
LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
z Peak Forward Voltage
: VFM ≤ 0.47 V
z Repetitive Peak Reverse Voltage : VRRM = 30 V
z Average Output Rectified Current : IO = 30 A
z Low Switching Losses and Output Noise
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage Average Output Rectified Current
Peak One Cycle Surge Forward Current (Sine Wave)
Junction Temperature Storage Temperature Range Screw Torque
VRRM IO
IFSM
Tj Tstg ―
30 30 300 (50Hz) 330 (60Hz) −40~125 −40~150 0.6
V A
A
°C °C N·m
JEDEC JEITA TOSHIBA
― ― 12-10C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 2.0 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
(Note 1)
Repetitive Peak Reverse Current (Note 1)
Junction Capacitance
(Note 1)
Thermal Resistance
VFM IRRM
Cj Rth (j-c)
IFM = 15A VRRM = 30V VR = 10V, f = 1.0MHz DC Total, Junction to Case
Note 1: A value applied to one cell.
MIN TYP. MAX
― 0.47 V
― 15 mA
820 ―
pF
― 2.5 °C / W
POLARITY
1 2006-11-10
MARKING
30FWJ2CZ Characteristics
indicator
30FWJ2CZ47M
Abbreviation Code 30FWJ2CZ
Part No. 30FWJ2CZ47M
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature.
IO: We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IO and Tj be below 100°C. When using this device, take the margin into consideration by using an allowable Tamax-IO curve.
IFSM: This rating specif.