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30FWJ2CZ47M Dataheets PDF



Part Number 30FWJ2CZ47M
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SCHOTTKY BARRIER RECTIFIER
Datasheet 30FWJ2CZ47M Datasheet30FWJ2CZ47M Datasheet (PDF)

30FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2CZ47M LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Peak Forward Voltage : VFM ≤ 0.47 V z Repetitive Peak Reverse Voltage : VRRM = 30 V z Average Output Rectified Current : IO = 30 A z Low Switching Losses and Output Noise Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage Averag.

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30FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2CZ47M LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION z Peak Forward Voltage : VFM ≤ 0.47 V z Repetitive Peak Reverse Voltage : VRRM = 30 V z Average Output Rectified Current : IO = 30 A z Low Switching Losses and Output Noise Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Sine Wave) Junction Temperature Storage Temperature Range Screw Torque VRRM IO IFSM Tj Tstg ― 30 30 300 (50Hz) 330 (60Hz) −40~125 −40~150 0.6 V A A °C °C N·m JEDEC JEITA TOSHIBA ― ― 12-10C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 2.0 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage (Note 1) Repetitive Peak Reverse Current (Note 1) Junction Capacitance (Note 1) Thermal Resistance VFM IRRM Cj Rth (j-c) IFM = 15A VRRM = 30V VR = 10V, f = 1.0MHz DC Total, Junction to Case Note 1: A value applied to one cell. MIN TYP. MAX ― 0.47 V ― 15 mA 820 ― pF ― 2.5 °C / W POLARITY 1 2006-11-10 MARKING 30FWJ2CZ Characteristics indicator 30FWJ2CZ47M Abbreviation Code 30FWJ2CZ Part No. 30FWJ2CZ47M Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IO: We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IO and Tj be below 100°C. When using this device, take the margin into consideration by using an allowable Tamax-IO curve. IFSM: This rating specif.


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