Document
Bulletin I2715 rev. I 03/03
MB SERIES
SINGLE PHASE BRIDGE Features
Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio UL E 62320 approved Nickel plated terminals solderable as per MIL-STD-202 Method 208; solder: Sn/Pb (60/40); solder temperature: 235-260°C max. time: 8-10 secs
Power Modules
25 A 35 A
Description
A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications.
Major Ratings and Characteristics
Parameters 26MB-A
IO @ TC IFSM @ 50Hz @ 60Hz It
2
36MB-A
35 60 475 500 1130 1030
Units
A
o
25 65 400 420 790 725
C
A A A2 s A2 s V
o
@ 50Hz @ 60Hz
VRRM range TJ
200 to 1200 - 55 to 150
C
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1
MB Series
Bulletin I2715 rev. I 03/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
20 40 26MB..A 36MB..A 60 80 100 120
VRRM , maximum repetitive peak reverse voltage V
200 400 600 800 1000 1200
VRSM , maximum nonrepetitive peak rev. voltage V
275 500 725 900 1100 1300
I RRM max.
@ TJ max.
2
Forward Conduction
Parameters
IO Maximum DC output current @ Case temperature IFSM Maximum peak, one-cycle non-repetitive forward current
26MB-A
25 20 65 400 420 335 350
36MB-A Units Conditions
35 28 60 475 500 400 420 1130 1030 800 730 11.3 0.79 0.96 5.8 4.5 1.14 V mΩ A2s A A °C A t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Initial TJ = TJ max. Resistive or inductive load Capacitive load
I2t
Maximum I2t for fusing
790 725 560 512
I2√t
Maximum I2√t for fusing
5.6 0.76 0.92 6.8 5.0 1.11
KA2√s I2t for time tx = I2√t x √tx ; 0.1 ≤ tx ≤ 10ms, VRRM = 0V V (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. (I > π x IF(AV)), @ TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max. (I > π x IF(AV)), @ TJ max. TJ = 25 oC, IFM = 40APK (26MB) TJ = 25 oC, IFM = 55APK (36MB) TJ = 25 oC, per diode at VRRM f = 50 Hz, t = 1s tp = 400µs
VF(TO)1 Low-level of threshold voltage VF(TO)2 High-level of threshold voltage rt1 rt2 VFM IRRM VINS Low-level forward slope resistance High-level forward slope resistance Maximum forward voltage drop
Max. DC reverse current RMS isolation voltage base plate
10 2700
10 2700
µA V
2
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MB Series
Bulletin I2715 rev. I 03/03
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction temperature range Storage temperature range 1.7 0.2 20 2.0
26MB-A
36MB-A Units Conditions
o o
- 55 to 150 - 55 to 150
C C K/W K/W g Nm Bridge to heatsink Per bridge Mounting surface , smooth, flat and greased
RthJC Max. thermal resistance junction to case RthCS Max. thermal resistance, case to heatsink wt T Approximate weight Mounting Torque ± 10%
1.2
Ordering Information Table
Device Code
36 1
1 2 3 4 -
MB 2
120 3
A 4
26 =.