3N163

3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltage (NOTE 1) Drain Current Storage Temperature Power Dissipation D S G 2 1 3 4 Case D S -40V -30V ±125V 50mA -65°C to +200°C 375mW G Case 18 X 30 MILS TO-72 Bottom View ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS 3N163 3N164 MIN MAX MIN MAX Gate Forward Current -10 -10 pA IGSSF TA=+125°C -25 -40 -40 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 200 400 250 -5.0 2000 -30 4000 250 2.5 0.7 3.0 -3.0 1000 -30 -30 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 400 800 300 -30 4000 250 2.5 0.7 3.0 -25 BVDSS BVSDS VGS(th) VGS(th) VGS IDSS ISDS rDS(on) ID(on) gfs gos Ciss Crss Coss Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Source Drain Current Drain-Source on Resistance On Drain Current Forward Transconductance Output Admittance Input Capacitance-Output Shorted Reverse Transfer Capacitance Output Capacitance Input Shorted UNITS CONDITIONS VDS=0 (3N163) VDS=0 (3N164) VGS=0 ID=-10µA VGD=0 VBD=0 VGS=-40V ID=-10µA V IS=-10µA VGS=-30V VDS=VGS VDS=-15V VDS=-15V pA ohms mA µs pF VDS=-15V VDS=15V VGS=-20V VDS=-15V VDS=-15V VDS=-15V (NOTE 2) ID=-10µA ID=-0.5m...