3N166

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION Very High Impedance High Gate Breakdown Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absol...