P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
3N190 3N191
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LO...
Description
3N190 3N191
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation One Side Continuous Power Dissipation Both Sides Maximum Current Drain to Source2 Maximum Voltages Drain to Gate2 Drain to Source Gate to Gate
2 1
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
IGSS ≤ ±10pA Crss ≤ 1.0pF
TO-78 BOTTOM VIEW C
-65 to +150 °C -55 to +135 °C 300mW 525mW 50mA 30V 30V ±125V ±80V
G1 S1 D1
2
4 3 5 6 1 7
G2 S2 D2
Transient Gate to Source2,3
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL
gfs1 gfs2
CHARACTERISTIC Forward Transconductance Ratio Gate to Source Threshold Voltage Differential Gate to Source Threshold Voltage 4 Differential with Temperature Gate to Source Threshold Voltage Differential with Temperature4
MIN 0.85
TYP
MAX UNITS 1.0 100 100
µV °C
CONDITIONS VDS = -15V, ID = -500µA, f = 1kHz VDS = -15V, ID = -500µA VDS = -15V, ID = -500µA TS = -55 TO +25 °C VDS = -15V, ID = -500µA TS = +25 TO +125 °C
VGS1-2
∆VGS1 − 2 ∆T ∆VGS1 − 2 ∆T
mV
100
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS BVSDS VGS VGS(th) IGSSR IGSSF IDSS ISDS ID(on) CHARACTERISTIC Drain to Source Breakdown Voltage Source to Drain Breakdo...
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