3N191

3N190 3N191 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation One Side Continuous Power Dissipation Both Sides Maximum Current Drain to Source2 Maximum Voltages Drain to Gate2 Drain to Source Gate to Gate 2 1 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE IGSS ≤ ±10pA Crss ≤ 1.0pF TO-78 BOTTOM VIEW C -65 to +150 °C -55 to +135 °C 300mW 525mW 50mA 30V 30V ±125V ±80V G1 S1 D1 2 4 3 5 6 1 7 G2 S2 D2 Transient Gate to Source2,3 MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL gfs1 gfs2 CHARACTERISTIC Forward Transconductance Ratio Gate to Source Threshold Voltage Differential Gate to Source Threshold Voltage 4 Differential with Temperature Gate to Source Threshold Voltage Differential with Temperature4 MIN 0.85 TYP MAX UNITS 1.0 100 100 µV °C CONDITIONS VDS = -15V, ID = -500µA, f = 1kHz VDS = -15V, ID = -500µA VDS = -15V, ID = -500µA TS = -55 TO +25 °C VDS = -15V, ID = -500µA TS = +25 TO +125 °C VGS1-2 ∆VGS1 − 2 ∆T ∆VGS1 − 2 ∆T mV 100 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS BVSDS VGS VGS(th) IGSSR IGSSF IDSS ISDS ID(on) CHARACTERISTIC Drain to Source Breakdown Voltage Source to Drain Breakdo...