3SK135A

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low Crss : 0.02 pF TYP. High Gps : 18 dB TYP. Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 0.16 +0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5˚ 0 to 0.1 20 ± 10 ± 10 25 200 150 –65 to +150 *RL ≥ 10 kΩ V V V mA mW ˚ C ˚ C 1 0.6+0.1 –0.05 5˚ +0.1 5˚ 0.4–0.05 +0.2 1.1–0.1 0.8 4 (1.9) 1. Source 2. Drain 3. Gate 2 4. Gate 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 2.9±0.2 (1.9) 0.95 0.95 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transter Admittance SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | 14 18 MIN. 20 0.01 6 –2.0 –0.7 ± 20 ± 20 TYP. MAX. UNIT V mA V V nA nA ms TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 5 V, VG2S = 4 V, VG1S = 0 VDS = 10 V, VG2S = 4 V, ID = 10 µA VDS = 10 V, VG1S = 4 V, ID = 10 µA VDS = 0, VG1S = ± 8 V, VG2S = 0 VDS = 0, VG2S = ± 8 V, VG1S = 0 VDS = 5 V, VG2S = 4 V, ID = 10 mA, f = 1 kHz VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz Input C...