3SK166A

3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features Low voltage operation Low noise: NF = 1.2dB (typ.) at 800MHz High gain: Ga = 20dB (typ) at 800MHz High stability Application UHF band amplifier, oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) Drain to source voltage VDSX 8 Gate 1 to source voltage VG1S –6 Gate 2 to source voltage VG2S –6 Drain current ID 80 Allowable power dissipation PD 150 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Y11-PS 3SK166A Electrical Characteristics Item Drain cut-off current Symbol IDSX Condition Min. Typ. VDS = 8V VG1S = –4V VG2S = 0V VG1S = –5V IG1SS VG2S = 0V VDS = 0V VG2S = –5V IG2SS VG1S = 0V VDS = 0V...